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Samsung 9100 PRO 1TB PCIe Gen5 NVMe M.2 SSD with Heatsink, 14700MB/s Read, 13300MB/s Write, TLC V-NAND, AES 256-bit Encryption, 5 Year Warranty
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SKU: MZ-VAP1T0CW

Availability: In Stock

Brand: Samsung

Category: Solid State Drives (SSD)

$529.00


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Description
SPECIFICATION
Review

The Samsung 9100 PRO 1TB PCIe Gen5 NVMe SSD is a high-performance storage solution designed for client PCs and gaming consoles. Featuring cutting-edge PCIe® 5.0 x4 and NVMe™ 2.0 interface technology, this M.2 2280 SSD delivers exceptional sequential read speeds up to 14,700 MB/s and write speeds up to 13,300 MB/s, enabling ultra-fast file transfers and game load times.

Built with Samsung's reliable V-NAND TLC (V8) and an in-house custom controller, the drive combines speed with endurance. It includes 1GB LPDDR4X cache for responsive performance and supports powerful random IOPS performance reaching up to 1,850K read and 2,600K write IOPS (Queue Depth 32). A premium heatsink is integrated to maintain optimal temperatures during intensive workloads.

Security is robust, with hardware-based AES 256-bit encryption, TCG/Opal v2.0, and Microsoft eDrive (IEEE1667) compliance, protecting your sensitive data seamlessly.

Samsung provides a 5-year limited warranty or 600TBW endurance rating, ensuring long-term reliability and peace of mind. The lightweight design (max 30g) ensures easy installation without compromising thermal performance.

Additional features:

  • Designed for next-gen desktops and gaming consoles

  • Samsung Magician software support for firmware updates and drive optimization

  • M.2 2280 form factor with heatsink for improved thermal management
Explore unprecedented speed and durability with the Samsung 9100 PRO 1TB SSD — perfect for enthusiasts seeking top-tier storage performance.

General

WeightMax 30g
Model NumberMZ-VAP1T0CW
Endurance600 TBW
Cache1GB LPDDR4X
mtbf_hours1500000
Warranty (years)5
Part NumberMZ-VAP1T0CW
Random IOPS1850000
Endurance (TBW)600
Heatsink TypeHeatsink
NVMe VersionNVMe 2.0
weight_grams30
EncryptionAES 256-bit,TCG/Opal v2.0,Microsoft eDrive (IEEE1667)
Random 4K Read IOPS1850000
Random 4K Write IOPS2600000
Form FactorM.2 2280 with Heatsink
Capacity1TB
Sequential Read SpeedUp to 14,700 MB/s
Sequential Write SpeedUp to 13,300 MB/s
Random Read IOPSUp to 1,850K IOPS (Q32)
Random Write IOPSUp to 2,600K IOPS (Q32)
NAND TypeSamsung V-NAND TLC (V8)
sequential_read_mbs14700
sequential_write_mbs13300
Warranty5 Year Limited Warranty
NAND TypeSamsung V-NAND TLC (V8)
Drive TypeNVMe SSD (M.2)
capacity_gb1000
InterfacePCIe® 5.0 x4,NVMe™ 2.0
Form FactorM.2 2280 with Heatsink

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