SKU: MZ-VAP2T0BW
Availability: In Stock
Brand: Samsung
Category: Solid State Drives (SSD)
100% Guarantee Safe Checkout
The Samsung 9100 PRO 2TB is a cutting-edge PCIe® 5.0 x4 NVMe™ 2.0 M.2 (2280) solid state drive designed to deliver exceptional performance for high-end client PCs, gaming consoles, and content creation. Featuring blistering sequential read speeds up to 14,700 MB/s and write speeds up to 13,400 MB/s, this SSD drastically reduces load times and accelerates workflows.
Crafted with Samsung's advanced V-NAND TLC technology and an in-house controller along with a 2GB LPDDR4X cache, the 9100 PRO provides incredible random IOPS performance—up to 1,850K random reads and 2,600K random writes—for smooth multitasking and rapid data access.
Data security is enhanced through AES 256-bit encryption, TCG/Opal, and Microsoft eDrive support, safeguarding your sensitive information. Durable and reliable, it offers a 1,200 TBW endurance rating and a 5-year limited warranty, with an MTBF of 1.5 million hours, ensuring long-term peace of mind.
Additional features include support for TRIM, S.M.A.R.T., and Samsung Magician software for easy drive management and firmware updates. Available in variants with or without an integrated heatsink to suit your cooling preferences.
Key Highlights:
| MTBF | 1.5 million hours |
| Warranty | 5-year Limited Warranty |
| Endurance | 1,200 TBW |
| Cache | 2GB LPDDR4X |
| NAND Type | Samsung V-NAND TLC |
| Random Write IOPS | Up to 2,600,000 |
| Random Read IOPS | Up to 1,850,000 |
| Sequential Write Speed | Up to 13,400 MB/s |
| Capacity | 2TB |
| Form Factor | M.2 2280 |
| Sequential Read Speed | Up to 14,700 MB/s |
| Random 4K Write IOPS | 2600000 |
| Random 4K Read IOPS | 1850000 |
| Drive Type | PCIe Gen5 NVMe SSD |
| Encryption | AES 256-bit,TCG/Opal,Microsoft eDrive |
| weight_grams | 9 |
| NVMe Version | NVMe 2.0 |
| Endurance (TBW) | 1200 |
| Random IOPS | 2600000 |
| Part Number | MZ-VAP2T0BW |
| Warranty (years) | 5 |
| Features | AES 256-bit Encryption, Samsung V-NAND TLC, 2GB LPDDR4X Cache, TCG/Opal, Microsoft eDrive |
| sequential_write_mbs | 13400 |
| mtbf_hours | 1500000 |
| sequential_read_mbs | 14700 |
| NAND Type | Samsung V-NAND TLC |
| Model Number | MZ-VAP2T0BW |
| capacity_gb | 2000 |
| Weight | Max 9.0g |
| Interface | PCIe 5.0 x4,NVMe 2.0 |
| Form Factor | M.2 2280 |