SKU: mz-vap4t0bw
Availability: In Stock
Brand: Samsung
Category: Solid State Drives (SSD)
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Experience top-tier storage performance with the Samsung 9100 PRO 4TB PCIe Gen5 NVMe SSD. Engineered for gamers, content creators, and high-performance workloads, this M.2 2280 SSD leverages PCIe® 5.0 x4 and NVMe™ 2.0 technology to deliver blazing sequential read speeds up to 14,800 MB/s and write speeds up to 13,400 MB/s. Harness ultra-fast random IOPS—up to 2,200,000 random reads and 2,600,000 random writes—to handle multi-tasking and demanding applications effortlessly.
Built with Samsung’s advanced V-NAND TLC memory and proprietary in-house controller, the 9100 PRO ensures reliability with a generous total bytes written (TBW) rating of 2400 TBW and an MTBF of 1.5 million hours. Robust security features include Class 0 AES 256-bit encryption, alongside support for TCG/Opal v2.0 and Microsoft eDrive (IEEE1667), safeguarding your data in any environment.
The drive is available with or without an integrated heatsink, optimized for thermally efficient operation. Managed using the Samsung Magician software, users can enjoy seamless firmware updates, drive health monitoring, and performance optimization.
Ideal for:
| Warranty | 5-year Limited or TBW warranty |
| Weight | Max 9.0g |
| Endurance (TBW) | 2,400 TBW |
| Mean Time Between Failures (MTBF) | 1,500,000 hours |
| Operating Temperature | Not specified by manufacturer |
| Controller | Samsung in-house controller |
| NAND Type | Samsung V-NAND TLC (V8) |
| Random Write IOPS | Up to 2,600,000 IOPS |
| Random Read IOPS | Up to 2,200,000 IOPS |
| Sequential Write Speed | Up to 13,400 MB/s |
| Sequential Read Speed | Up to 14,800 MB/s |
| Capacity | 4TB |
| Random 4K Write IOPS | 2600000 |
| Form Factor | M.2 2280 |
| Random 4K Read IOPS | 2200000 |
| Encryption | AES 256-bit (Class 0),TCG/Opal v2.0,MS eDrive (IEEE1667) |
| Drive Type | PCIe Gen5 NVMe SSD |
| weight_grams | 9 |
| Random IOPS | 2200000 |
| Endurance (TBW) | 2400 |
| NVMe Version | NVMe 2.0 |
| Features | AES 256-bit Encryption, V-NAND TLC, PCIe Gen5, High endurance 2400TBW |
| Warranty (years) | 5 |
| mtbf_variant | Manufacturer specified MTBF |
| mtbf_hours | 1500000 |
| sequential_write_mbs | 13400 |
| sequential_read_mbs | 14800 |
| capacity_gb | 4000 |
| NAND Type | Samsung V-NAND TLC (V8) |
| Interface | PCIe 5.0 x4,NVMe 2.0 |
| Form Factor | M.2 2280 |