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Samsung 9100 PRO 4TB PCIe Gen5 NVMe M.2 SSD – 14800MB/s Read, 13400MB/s Write, 2400TBW Endurance, AES 256-bit Encryption, 5-Year Warranty
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SKU: mz-vap4t0bw

Availability: In Stock

Brand: Samsung

Category: Solid State Drives (SSD)

$1,579.00


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Description
SPECIFICATION
Review

Experience top-tier storage performance with the Samsung 9100 PRO 4TB PCIe Gen5 NVMe SSD. Engineered for gamers, content creators, and high-performance workloads, this M.2 2280 SSD leverages PCIe® 5.0 x4 and NVMe™ 2.0 technology to deliver blazing sequential read speeds up to 14,800 MB/s and write speeds up to 13,400 MB/s. Harness ultra-fast random IOPS—up to 2,200,000 random reads and 2,600,000 random writes—to handle multi-tasking and demanding applications effortlessly.

Built with Samsung’s advanced V-NAND TLC memory and proprietary in-house controller, the 9100 PRO ensures reliability with a generous total bytes written (TBW) rating of 2400 TBW and an MTBF of 1.5 million hours. Robust security features include Class 0 AES 256-bit encryption, alongside support for TCG/Opal v2.0 and Microsoft eDrive (IEEE1667), safeguarding your data in any environment.

The drive is available with or without an integrated heatsink, optimized for thermally efficient operation. Managed using the Samsung Magician software, users can enjoy seamless firmware updates, drive health monitoring, and performance optimization.

Ideal for:

  • High-end gaming rigs

  • Professional content creation and editing

  • AI workloads and demanding compute tasks
Key Benefits:
  • Ultra-fast PCIe 5.0 speeds for future-proof performance

  • High endurance supporting long-term workloads

  • Advanced security protocols to protect sensitive data

  • Easy management through Samsung Magician software
Upgrade your PC storage with the cutting-edge Samsung 9100 PRO 4TB SSD and unleash the full potential of your system.

General

Warranty5-year Limited or TBW warranty
WeightMax 9.0g
Endurance (TBW)2,400 TBW
Mean Time Between Failures (MTBF)1,500,000 hours
Operating TemperatureNot specified by manufacturer
ControllerSamsung in-house controller
NAND TypeSamsung V-NAND TLC (V8)
Random Write IOPSUp to 2,600,000 IOPS
Random Read IOPSUp to 2,200,000 IOPS
Sequential Write SpeedUp to 13,400 MB/s
Sequential Read SpeedUp to 14,800 MB/s
Capacity4TB
Random 4K Write IOPS2600000
Form FactorM.2 2280
Random 4K Read IOPS2200000
EncryptionAES 256-bit (Class 0),TCG/Opal v2.0,MS eDrive (IEEE1667)
Drive TypePCIe Gen5 NVMe SSD
weight_grams9
Random IOPS2200000
Endurance (TBW)2400
NVMe VersionNVMe 2.0
FeaturesAES 256-bit Encryption, V-NAND TLC, PCIe Gen5, High endurance 2400TBW
Warranty (years)5
mtbf_variantManufacturer specified MTBF
mtbf_hours1500000
sequential_write_mbs13400
sequential_read_mbs14800
capacity_gb4000
NAND TypeSamsung V-NAND TLC (V8)
InterfacePCIe 5.0 x4,NVMe 2.0
Form FactorM.2 2280

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