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Samsung 990 EVO Plus 1TB PCIe Gen5 NVMe M.2 SSD - 7150MB/s Read, 6300MB/s Write, 850K/1.35M IOPS, TLC V-NAND, AES 256-bit Encryption, 5 Year Warranty
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SKU: MZ-V9S1T0BW

Availability: In Stock

Brand: Samsung

Category: Solid State Drives (SSD)

$499.00


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Description
SPECIFICATION
Review

The Samsung 990 EVO Plus 1TB is a high-performance PCIe Gen5 NVMe SSD designed for client PCs and enthusiasts requiring blazing-fast storage. Featuring Samsung’s advanced V-NAND TLC technology combined with a nickel-coated in-house controller, this M.2 2280 SSD delivers sequential read speeds up to 7,150–7,250 MB/s and sequential write speeds up to 6,300 MB/s, ideal for gaming, content creation, and demanding workloads.

With an impressive random read/write IOPS performance of up to 850,000 / 1,350,000 (QD32 4KB), the drive ensures swift responsiveness and smooth multitasking. Its Intelligent TurboWrite 2.0 technology leverages an enlarged buffer region to maintain consistent write speeds during heavy use.

Developed for power efficiency, the SSD uses a nickel-coated controller to enhance MB/s per watt and provides advanced thermal control. Additional features include support for PCIe 4.0 x4 and PCIe 5.0 x2 NVMe 2.0 compatibility, AES 256-bit encryption (Class 0) for secure data handling, and integration with the Samsung Magician software suite for drive management.

Reliability is guaranteed with an MTBF of 1.5 million hours, shock tolerance of 1,500 G, operating temperature range of 0–70°C, and a manufacturer-backed 5-year limited warranty or 600 TBW endurance rating. The 990 EVO Plus is a top-tier choice for users seeking extreme speed, durability, and security in an M.2 SSD.

General

Part NumberMZ-V9S1T0BW
Voltage3.3 V \u00b15%
Dimensions (WxHxD)80.15 x 22.15 x 2.38 mm
Shock Tolerance1,500 G,0.5 ms half sine
WeightMax 9.0 g
Operating Temperature0\u201370\u00b0C
Warranty5-year limited or 600 TBW
Technology FeaturesIntelligent TurboWrite 2.0,Host Memory Buffer (HMB)
MTBF1.5 million hours
ControllerNickel-coated Samsung in-house controller
Random Read IOPSUp to 850,000 (QD32 4KB)
Random Write IOPSUp to 1,350,000 (QD32 4KB)
Sequential Read SpeedUp to 7,150–7,250 MB/s
Sequential Write SpeedUp to 6,300 MB/s
NAND TypeSamsung V-NAND TLC
Capacity1TB
Form FactorM.2 2280
Random IOPS1350000
mtbf_variantMean Time Between Failures (MTBF)
Warranty (years)5
mtbf_hours1500000
NAND TypeSamsung V-NAND TLC
sequential_write_mbs6300
sequential_read_mbs7150
capacity_gb1000
InterfacePCIe Gen4 x4 \/ PCIe Gen5 x2 NVMe 2.0
Form FactorM.2 2280
Random 4K Write IOPS1350000
Random 4K Read IOPS850000
operating_temperature_c0\u201370\u00b0C
EncryptionAES 256-bit (Class 0)
Drive TypeNVMe SSD
weight_grams9
Backward CompatibilityPCIe Gen4 x4
NVMe Version2.0
Endurance (TBW)600
Part NumberMZ-V9S1T0BW
FeaturesIntelligent TurboWrite 2.0, Host Memory Buffer (HMB)

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