SKU: MZ-V9S4T0BW
Availability: In Stock
Brand: Samsung
Category: Solid State Drives (SSD)
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Samsung 990 EVO Plus 4TB PCIe Gen 4 NVMe M.2 SSD delivers top-tier storage performance ideal for content creators, gamers, and power users seeking ultra-fast and reliable SSD technology. This M.2 (2280) form factor drive features PCIe® Gen 4.0 x4 interface with backward compatibility for PCIe® Gen 5.0 x2, maximizing speed and future-proofing your system.
Experience lightning-fast sequential read speeds up to 7,250 MB/s and write speeds up to 6,300 MB/s, with random IOPS performance reaching ~1,050K read and ~1,400K write at QD32, enabling rapid load times and seamless multitasking.
The SSD utilizes Samsung's latest V-NAND TLC technology and a proprietary controller optimized for endurance and efficiency. With Intelligent TurboWrite 2.0 technology and an enlarged TurboWrite buffer, this drive enhances write performance during large file transfers.
Designed as a DRAM-less model with Host Memory Buffer (HMB) support, it offers excellent power efficiency and thermal management, further improved by a nickel-coated heat shield. Robust security features include AES 256-bit full-disk encryption, TCG/Opal, and IEEE1667 compliance, safeguarding your data.
Rated for 2400 TBW endurance and boasting an MTBF of approximately 1.5 million hours, the Samsung 990 EVO Plus is backed by a 5-year limited warranty, ensuring reliability and peace of mind.
Key form factor and environmental specs: dimensions 80.15 x 22.15 x 2.38 mm, max weight ~9.0g, and operating temperature range of 0–70 °C.
Upgrade your PC storage with the Samsung 990 EVO Plus 4TB SSD for unmatched performance, durability, and security.
| Operating Temperature | 0\u00b0C to 70\u00b0C |
| Warranty | 5-year limited warranty or TBW limit |
| Warranty (years) | 5 |
| Features | V-NAND TLC, AES 256-bit full-disk encryption, Host Memory Buffer (DRAM-less design), TCG/Opal, IEEE1667 |
| Weight | Approx. 9.0 g |
| Dimensions (WxHxD) | 80.15 x 22.15 x 2.38 mm |
| MTBF | 1.5 million hours |
| Cache | Host Memory Buffer (DRAM-less design) |
| NAND Type | Samsung V-NAND TLC |
| Random Write IOPS (QD32) | ~1,400,000 IOPS |
| Random Read IOPS (QD32) | ~1,050,000 IOPS |
| Sequential Write Speed | Up to 6,300 MB/s |
| Sequential Read Speed | Up to 7,250 MB/s |
| Protocol | NVMe 2.0 |
| Capacity | 4TB |
| Form Factor | M.2 2280 |
| Model Number | MZ-V9S4T0BW |
| Random 4K Write IOPS | 1400000 |
| Random 4K Read IOPS | 1050000 |
| operating_temperature_c | 0\u00b0C to 70\u00b0C |
| Endurance | 2400 TBW |
| Encryption | AES 256-bit full-disk,TCG/Opal,IEEE1667 |
| Drive Type | PCIe NVMe SSD |
| weight_grams | 9 |
| NVMe Version | NVMe 2.0 |
| Backward Compatibility | Compatible with PCIe Gen 4.0 and PCIe Gen 5.0 x2 |
| Part Number | MZ-V9S4T0BW |
| Endurance (TBW) | 2400 |
| mtbf_hours | 1500000 |
| mtbf_variant | Mean Time Between Failures (MTBF) |
| sequential_write_mbs | 6300 |
| sequential_read_mbs | 7250 |
| capacity_gb | 4000 |
| NAND Type | Samsung V-NAND TLC |
| Form Factor | M.2 2280 |
| Interface | PCIe Gen 4.0 x4,compatible with PCIe Gen 5.0 x2 |
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