SKU: MZ-V9P4T0CW
Availability: In Stock
Brand: Samsung
Category: Solid State Drives (SSD)
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Experience blistering fast performance with the Samsung 990 PRO 4TB PCIe Gen4 NVMe SSD featuring a built-in slim heatsink designed for optimal thermal management. Utilizing PCIe Gen 4.0 x4 interface and NVMe 2.0 protocol, this M.2 2280 form factor SSD delivers sequential read speeds up to 7,450 MB/s and write speeds up to 6,900 MB/s, ensuring ultra-responsive gaming, editing, and professional workloads.
Built on advanced Samsung V-NAND TLC technology with an in-house controller and a 4 GB low-power DDR4 SDRAM cache, the 990 PRO offers exceptional random read/write IOPS reaching 1,600,000/1,550,000 respectively (4KB, QD32). The integrated slim heatsink supports efficient heat dissipation and is tailored for compatibility with PlayStation 5 and devices conforming to the PCI-SIG D8 8.8 mm height specification.
This SSD supports Dynamic Thermal Guard technology to maintain optimal performance during prolonged heavy operations. Security features include AES 256-bit encryption (Class 0) and full TCG/Opal/IEEE1667 compliance. Backed by a 5-year limited warranty or 2400 TBW endurance, and reliability rated at 1.5 million hours MTBF, it is the perfect upgrade for PC clients and game consoles demanding premium speed and durability.
Key Benefits:
| EAN | 8806094946857 |
| Model Number | MZ-V9P4T0CW |
| Weight | 28 grams |
| Dimensions (LxWxH) | 80.15 x 25 x 8.88 mm |
| MTBF (Mean Time Between Failures) | 1.5 million hours |
| Warranty | 5 years limited warranty or 2400 TBW |
| Thermal Management | Integrated slim heatsink,Dynamic Thermal Guard |
| Power Consumption (Typical) | Average 6.5 W; Burst 8.6 W; Idle up to 55 mW |
| Operating Temperature | 0 to 70 \u00b0C |
| Sequential Write Speed | Up to 6,900 MB/s |
| Random Read IOPS | Up to 1,600,000 (4KB,QD32) |
| Random Write IOPS | Up to 1,550,000 (4KB,QD32) |
| Cache | 4 GB Low Power DDR4 SDRAM |
| NAND Type | Samsung V-NAND TLC |
| Controller | Samsung In-house controller |
| Features | Integrated slim heatsink,Dynamic Thermal Guard,AES-256 (Class 0) encryption,PCIe Gen4 NVMe support,4 GB LPDDR4 SDRAM cache,Samsung In-house controller,Samsung V-NAND TLC,M.2 2280 form factor |
| Sequential Read Speed | Up to 7,450 MB/s |
| Capacity | 4 TB |
| Form Factor | M.2 2280 with integrated slim heatsink |
| Compatible Platforms | PS5 |
| Form Factor | M.2 2280 with integrated slim heatsink |
| NVMe Version | NVMe 2.0 |
| weight_grams | 28 |
| Drive Type | NVMe SSD |
| Encryption | AES 256-bit (Class 0),TCG/Opal/IEEE1667 |
| Random 4K Write IOPS | 1550000 |
| Random 4K Read IOPS | 1600000 |
| operating_temperature_c | 0 to 70 C |
| Power Consumption (W) | 6.5 |
| Random IOPS | 1550000 |
| Endurance (TBW) | 2400 |
| Heatsink Type | Integrated slim heatsink |
| Optimized For | PS5 |
| Warranty (years) | 5 |
| mtbf_hours | 1500000 |
| Part Number | MZ-V9P4T0CW |
| mtbf_variant | Manufacturer specification MTBF |
| NAND Type | Samsung V-NAND TLC |
| sequential_read_mbs | 7450 |
| sequential_write_mbs | 6900 |
| capacity_gb | 4096 |
| Interface | PCIe Gen 4.0 x4,NVMe 2.0 |
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